Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl

Type:
Journal
Info:
Journal of The Electrochemical Society, 154 3 H177-H181 2007
Date:
2007-01-11
DOI:
http://dx.doi.org/10.1149/1.2429035

Author Information

Name Institution
Keunjun KimHanyang University
Keunwoo LeeHanyang University
Sejin HanHanyang University
Wooho JeongHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Co

Hardware used: Custom Remote
DiCobalt OctaCarbonyl, Co2(CO)8
CAS#: 10210-68-1
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 50-250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Si(100)

Keywords

Cobalt
Metallic Thin Films
Atomic Layer Deposition
Impurities
Reaction Kinetics
Plasma Deposition

Notes

RTA for silicidation
Substrates pirahna + HF dip
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