Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl

Publication Information

Title: Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl

Type: Journal

Info: Journal of The Electrochemical Society, 154 3 H177-H181 2007

Date: 2007-01-11

DOI: http://dx.doi.org/10.1149/1.2429035

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma Co using Custom Remote

Deposition Temperature Range = 50-250C

DiCobalt OctaCarbonyl, Co₂(CO)₈

10210-68-1

Where to buy precursor

H₂, Hydrogen

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Thickness

TEM, Transmission Electron Microscope

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Substrates

Si(100)

Keywords

Cobalt

Metallic Thin Films

Atomic Layer Deposition

Impurities

Reaction Kinetics

Plasma Deposition

Notes

RTA for silicidation

Substrates pirahna + HF dip

Mark Sowa

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Deposition Hardware

Film and Plasma Characteristics

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