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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
Type:
Journal
Info:
Journal of The Electrochemical Society, 154 3 H177-H181 2007
Date:
2007-01-11
Author Information
| Name | Institution |
|---|---|
| Keunjun Kim | Hanyang University |
| Keunwoo Lee | Hanyang University |
| Sejin Han | Hanyang University |
| Wooho Jeong | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma Co
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si(100) |
Keywords
| Cobalt |
| Metallic Thin Films |
| Atomic Layer Deposition |
| Impurities |
| Reaction Kinetics |
| Plasma Deposition |
Notes
| RTA for silicidation |
| Substrates pirahna + HF dip |
| 34 |