Publication Information

Title: Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl

Type: Journal

Info: Journal of The Electrochemical Society, 154 3 H177-H181 2007

Date: 2007-01-11

DOI: http://dx.doi.org/10.1149/1.2429035

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma Co using Custom Remote

Deposition Temperature Range = 50-250C

10210-68-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Thickness

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Substrates

Si(100)

Keywords

Cobalt

Metallic Thin Films

Atomic Layer Deposition

Impurities

Reaction Kinetics

Plasma Deposition

Notes

RTA for silicidation

Substrates pirahna + HF dip

34



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