Publication Information

Title: Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl

Type: Journal

Info: Journal of The Electrochemical Society, 154 3 H177-H181 2007

Date: 2007-01-11

DOI: http://dx.doi.org/10.1149/1.2429035

Author Information

Name

Institution

Keunjun Kim

Hanyang University

Keunwoo Lee

Hanyang University

Sejin Han

Hanyang University

Wooho Jeong

Hanyang University

Hyeongtag Jeon

Hanyang University

Films

Plasma Co using Custom Remote

Deposition Temperature Range = 50-250C

DiCobalt OctaCarbonyl, Co2(CO)8

10210-68-1

Where to buy precursor

H2, Hydrogen

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

Si(100)

Keywords

Cobalt

Metallic Thin Films

Atomic Layer Deposition

Impurities

Reaction Kinetics

Plasma Deposition

Notes

RTA for silicidation

Substrates pirahna + HF dip

34


Mark Sowa

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