The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G200-G203 (2006)
Date:
2006-02-02
Author Information
| Name | Institution |
|---|---|
| Seokhoon Kim | Hanyang University |
| Jinwoo Kim | Hanyang University |
| Jihoon Choi | Hanyang University |
| Hyunseok Kang | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Wontae Cho | Korea Research Institute of Chemical Technology |
| Ki-Seok An | Korea Research Institute of Chemical Technology |
| Taek-Mo Chung | Korea Research Institute of Chemical Technology |
| Yunsoo Kim | Korea Research Institute of Chemical Technology |
| Choelhwyi Bae | Samsung Electronics Co. |
Films
Plasma HfO2
Plasma HfO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1176 |