Publication Information

Title: Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4

Type: Journal

Info: Electrochemical and Solid-State Letters, 9 (6) G200-G203 (2006)

Date: 2006-02-02

DOI: http://dx.doi.org/10.1149/1.2189219

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Samsung Electronics Co.

Films

Plasma HfO2 using Custom Remote

Deposition Temperature Range = 150-325C

0-0-0

7782-44-7

Plasma HfO2 using Custom Remote

Deposition Temperature Range = 150-325C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Thickness

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Substrates

Si(100)

Keywords

Notes

1176



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