Publication Information

Title:
Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G200-G203 (2006)
Date:
2006-02-02

Author Information

Name Institution
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Jihoon ChoiHanyang University
Hyunseok KangHanyang University
Hyeongtag JeonHanyang University
Wontae ChoKorea Research Institute of Chemical Technology
Ki-Seok AnKorea Research Institute of Chemical Technology
Taek-Mo ChungKorea Research Institute of Chemical Technology
Yunsoo KimKorea Research Institute of Chemical Technology
Choelhwyi BaeSamsung Electronics Co.

Films

Plasma HfO2

Hardware used: Custom Remote


CAS#: 7782-44-7

Plasma HfO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1176