Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources

Type:
Journal
Info:
Plasma Science and Technology, Vol.20, No.6, apr
Date:
2018-01-30
DOI:
http://dx.doi.org/10.1088/2058-6272/aaacc7

Author Information

Name Institution
Haiying WeiBeijing Institute of Graphic Communication
Hongge GuoQi Lu University of Technology
Lijun SangBeijing Institute of Graphic Communication
Xingcun LiBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication

Films

Plasma Al2O3

Hardware used: Custom Remote
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Plasma Al2O3

Hardware used: Custom ECR
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Innova

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Hiden Analytical QMS

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Hiden Analytical QMS

Substrates

Silicon

Notes

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