Publication Information

Title: Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing

Type: Journal

Info: J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A123

Date: 2013-11-30

DOI: http://dx.doi.org/10.1116/1.4847976

Author Information

Name

Institution

Ghent University

University of Antwerp

University of Antwerp

KU Leuven

SCK-CEN

Ghent University

Ghent University

Ghent University

Ghent University

Ghent University

Films

Thermal TiO2 using Custom Remote

Deposition Temperature = 150C

3275-24-9

7732-18-5

Plasma TiN using Custom Remote

Deposition Temperature = 150C

3275-24-9

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

UV-Vis Transmission

Custom

Unknown

Band Gap

Tauc Plotting

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension Edge

Photocatalytic Activity

Unknown

Unknown

Substrates

Si(100)

Quartz

Keywords

Photocatalyst

Doping

PEALD Film Development

Notes

Anneals

7



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