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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 8 (3) G82-G84 (2005)
Date:
2004-11-04
DOI:
http://dx.doi.org/10.1149/1.1854773

Author Information

Name Institution
Ju Youn KimHanyang University
Seokhoon KimHanyang University
Hyungtak SeoNorth Carolina State University
Jung-Hyung KimKorea Research Institute of Standards and Science (KRISS)
Hyeongtag JeonHanyang University

Films

Plasma ZrO2

Hardware used: Custom Remote
TDEAZr, tetrakis(diethylamido)zirconium, zirconium diethylamide, (Et2N)4Zr
CAS#: 13801-49-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Electron Density, ne
Analysis: Cut-off Method
Diagnostic: Custom

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

1245