Publication Information

Title:
Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (2) H97-H101 (2007)
Date:
2006-09-06

Author Information

Name Institution
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hyungseok HongHanyang University
Hyungchul KimHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeSamsung Electronics Co.

Films


Plasma Al2O3



Plasma AlON

Hardware used: Custom Remote


CAS#: 7782-44-7

CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1321