Publication Information

Title: Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition

Type: Journal

Info: Journal of The Electrochemical Society, 154 (2) H97-H101 (2007)

Date: 2006-09-06

DOI: http://dx.doi.org/10.1149/1.2401033

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Plasma HfO2 using Custom Remote

Deposition Temperature = 250C

19824-55-6

7782-44-7

Plasma Al2O3 using Custom Remote

Deposition Temperature = 250C

75-24-1

7782-44-7

Plasma HfON using Custom Remote

Deposition Temperature = 250C

19824-55-6

7782-44-7

7727-37-9

Plasma AlON using Custom Remote

Deposition Temperature = 250C

75-24-1

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Si(100)

Keywords

Notes

1321



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