Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (2) H97-H101 (2007)
Date:
2006-09-06
DOI:
http://dx.doi.org/10.1149/1.2401033

Author Information

Name Institution
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hyungseok HongHanyang University
Hyungchul KimHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeSamsung Electronics Co.

Films

Plasma HfO2

Hardware used: Custom Remote
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Custom Remote
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfON

Hardware used: Custom Remote
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma AlON

Hardware used: Custom Remote
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1321