Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process

Type:
Journal
Info:
Applied Physics Letters 93, 124104 (2008)
Date:
2008-09-09
DOI:
http://dx.doi.org/10.1063/1.2991288

Author Information

Name Institution
Hyeongtag JeonHanyang University
Youngdo WonHanyang University

Films

Plasma HfO2

Hardware used: Custom Remote
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: Custom
Diagnostic: Custom

Substrates

Notes

1349