Publication Information

Title: HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer

Type: Journal

Info: Journal of The Electrochemical Society, 156 (8) G109-G113 (2009)

Date: 2009-03-02

DOI: http://dx.doi.org/10.1149/1.3147254

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Yonsei University

Yonsei University

Pohang University of Science and Technology (POSTECH)

Films

Plasma HfNx using Quros Plus 200

Deposition Temperature Range N/A

19962-11-9

1333-74-0

Plasma HfO2 using Quros Plus 200

Deposition Temperature Range N/A

19962-11-9

7782-44-7

Plasma HfON using Quros Plus 200

Deposition Temperature Range N/A

19962-11-9

7782-44-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

-

Bonding States

ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Synchrotron

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Synchrotron

Conduction Band Edge States

NEXAFS, Near-Edge X-ray Absorption Fine Structures

Synchrotron

Microstructure

TEM, Transmission Electron Microscope

JEOL 2100F

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

JEOL 2100F

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

NBTI, Negative Bias Temperature Instability

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Trapped Positive Charge-Density Change

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Si(001)

Keywords

Notes

743



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