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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (8) G109-G113 (2009)
Date:
2009-03-02
Author Information
| Name | Institution |
|---|---|
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Gil-Ho Gu | Pohang University of Science and Technology (POSTECH) |
| Chan Gyung Park | Pohang University of Science and Technology (POSTECH) |
| Kayoung Lee | Yonsei University |
| Taeyoon Lee | Yonsei University |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma HfNx
Plasma HfO2
Plasma HfON
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Conduction Band Edge States
Analysis: NEXAFS, Near-Edge X-ray Absorption Fine Structures
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: NBTI, Negative Bias Temperature Instability
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(001) |
Keywords
Notes
| 743 |