Publication Information

Title:
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (8) G109-G113 (2009)
Date:
2009-03-02
DOI:
http://dx.doi.org/10.1149/1.3147254

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Gil-Ho GuPohang University of Science and Technology (POSTECH)
Chan Gyung ParkPohang University of Science and Technology (POSTECH)
Kayoung LeeYonsei University
Taeyoon LeeYonsei University
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma HfNx

Hardware used: Quros Plus 200
TDMAHf, (Me2N)4Hf, [(CH3)2N]4Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Quros Plus 200
TDMAHf, (Me2N)4Hf, [(CH3)2N]4Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfON

Hardware used: Quros Plus 200
TDMAHf, (Me2N)4Hf, [(CH3)2N]4Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Characteristic: Conduction Band Edge States
Analysis: NEXAFS, Near-Edge X-ray Absorption Fine Structures
Diagnostic: Synchrotron

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL 2100F

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: NBTI, Negative Bias Temperature Instability
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(001)

Keywords

Notes

743