Publication Information

Title:
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (8) G109-G113 (2009)
Date:
2009-03-02

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Gil-Ho GuPohang University of Science and Technology (POSTECH)
Chan Gyung ParkPohang University of Science and Technology (POSTECH)
Kayoung LeeYonsei University
Taeyoon LeeYonsei University
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films




Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Conduction Band Edge States
Analysis: NEXAFS, Near-Edge X-ray Absorption Fine Structures

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: NBTI, Negative Bias Temperature Instability
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(001)

Keywords

Notes

743