Title: HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
Type: Journal
Info: Journal of The Electrochemical Society, 156 (8) G109-G113 (2009)
Date: 2009-03-02
DOI: http://dx.doi.org/10.1149/1.3147254
Name
Institution
Pohang University of Science and Technology (POSTECH)
Pohang University of Science and Technology (POSTECH)
Pohang University of Science and Technology (POSTECH)
Yonsei University
Yonsei University
Pohang University of Science and Technology (POSTECH)
19962-11-9
19962-11-9
19962-11-9
Characteristic
Analysis
Diagnostic
Chemical Composition, Impurities
ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
-
Bonding States
ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
-
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
XRD, X-Ray Diffraction
-
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
Synchrotron
Chemical Binding
XPS, X-ray Photoelectron Spectroscopy
Synchrotron
Conduction Band Edge States
NEXAFS, Near-Edge X-ray Absorption Fine Structures
Synchrotron
Microstructure
TEM, Transmission Electron Microscope
JEOL 2100F
Chemical Composition, Impurities
EDS, EDX, Energy Dispersive X-ray Spectroscopy
JEOL 2100F
Hysteresis
C-V, Capacitance-Voltage Measurements
Keithley 4200-SCS
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Keithley 4200-SCS
NBTI, Negative Bias Temperature Instability
C-V, Capacitance-Voltage Measurements
Keithley 4200-SCS
Flat Band Voltage
C-V, Capacitance-Voltage Measurements
Keithley 4200-SCS
Trapped Positive Charge-Density Change
C-V, Capacitance-Voltage Measurements
Keithley 4200-SCS
CET, capacitance equivalent thickness
C-V, Capacitance-Voltage Measurements
Keithley 4200-SCS
Leakage Current
I-V, Current-Voltage Measurements
Keithley 4200-SCS
Si(001)
743
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