Publication Information

Title:
Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
Type:
Conference Proceedings
Info:
Vacuum, Volume 140, 2017, Pages 24 - 29
Date:
2016-10-04

Author Information

Name Institution
Jiayi HuangNational Tsing Hua University
Kuei-Shu Chang-LiaoNational Tsing Hua University
Chen-Chien LiNational Tsing Hua University
Yan-Lin LiNational Tsing Hua University
Chia-Chi TsaiNational Tsing Hua University
Chao-Chen KuNational Tsing Hua University
Po-Yen ChenNational Tsing Hua University
Tse-Jung HuangNational Tsing Hua University
Tzung-Yu WuNational Tsing Hua University
Fu-Chuan ChuNational Tsing Hua University
Shih-Han YiNational Tsing Hua University

Films


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Mobility
Analysis: -

Substrates

Keywords

Notes

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