Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
Type:
Conference Proceedings
Info:
Vacuum, Volume 140, 2017, Pages 24 - 29
Date:
2016-10-04
Author Information
Name | Institution |
---|---|
Jiayi Huang | National Tsing Hua University |
Kuei-Shu Chang-Liao | National Tsing Hua University |
Chen-Chien Li | National Tsing Hua University |
Yan-Lin Li | National Tsing Hua University |
Chia-Chi Tsai | National Tsing Hua University |
Chao-Chen Ku | National Tsing Hua University |
Po-Yen Chen | National Tsing Hua University |
Tse-Jung Huang | National Tsing Hua University |
Tzung-Yu Wu | National Tsing Hua University |
Fu-Chuan Chu | National Tsing Hua University |
Shih-Han Yi | National Tsing Hua University |
Films
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Mobility
Analysis: -
Substrates
Notes
932 |