Publication Information

Title: Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers

Type: Conference Proceedings

Info: Vacuum, Volume 140, 2017, Pages 24 - 29

Date: 2016-10-04

DOI: https://dx.doi.org/10.1016/j.vacuum.2016.10.004

Author Information

Name

Institution

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

Films

Other HfON using Unknown

Deposition Temperature Range N/A

19962-11-9

7732-18-5

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Mobility

Unknown

Unknown

Substrates

Keywords

Notes

932



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