Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers

Type:
Conference Proceedings
Info:
Vacuum, Volume 140, 2017, Pages 24 - 29
Date:
2016-10-04
DOI:
https://dx.doi.org/10.1016/j.vacuum.2016.10.004

Author Information

Name Institution
Jiayi HuangNational Tsing Hua University
Kuei-Shu Chang-LiaoNational Tsing Hua University
Chen-Chien LiNational Tsing Hua University
Yan-Lin LiNational Tsing Hua University
Chia-Chi TsaiNational Tsing Hua University
Chao-Chen KuNational Tsing Hua University
Po-Yen ChenNational Tsing Hua University
Tse-Jung HuangNational Tsing Hua University
Tzung-Yu WuNational Tsing Hua University
Fu-Chuan ChuNational Tsing Hua University
Shih-Han YiNational Tsing Hua University

Films

Other HfON

Hardware used: Unknown
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Mobility
Analysis: -
Diagnostic: -

Substrates

Notes

932