Publication Information

Title: Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers

Type: Conference Proceedings

Info: Vacuum, Volume 140, 2017, Pages 24 - 29

Date: 2016-10-04

DOI: https://dx.doi.org/10.1016/j.vacuum.2016.10.004

Author Information

Name

Institution

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

Films

Other HfON using Unknown

Deposition Temperature Range N/A

19962-11-9

7732-18-5

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

TEM, Transmission Electron Microscope

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Mobility

Unknown

-

Substrates

Keywords

Notes

932



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