Publication Information

Title: Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer

Type: Journal

Info: Microelectronic Engineering 147 (2015) 67 - 71

Date: 2015-04-06

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.026

Author Information

Name

Institution

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

Films

Other HfON using Unknown

Deposition Temperature Range N/A

7732-18-5

Other HfON using Unknown

Deposition Temperature Range N/A

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

On/Off Current Ratio

Unknown

-

Subthreshold Swing

Unknown

-

Interfacial Layer

Unknown

-

Substrates

Silicon

Keywords

Notes

465



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