Publication Information

Title: Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer

Type: Journal

Info: Microelectronic Engineering 147 (2015) 67 - 71

Date: 2015-04-06

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.026

Author Information

Name

Institution

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

National Tsing Hua University

Films

Other HfON using Unknown

Deposition Temperature Range N/A

7732-18-5

Other HfON using Unknown

Deposition Temperature Range N/A

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

On/Off Current Ratio

Unknown

Unknown

Subthreshold Swing

Unknown

Unknown

Interfacial Layer

Unknown

Unknown

Substrates

Silicon

Keywords

Notes

465



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