Publication Information

Title:
Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (4) H267-H271 (2008)
Date:
2008-01-08

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(001)
Si(111)
Si(011)

Keywords

Notes

1338