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Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (4) H267-H271 (2008)
Date:
2008-01-08
Author Information
| Name | Institution |
|---|---|
| Wan Joo Maeng | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma HfO2
Plasma HfON
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 19962-11-9
CAS#: 7782-44-7
CAS#: 7727-37-9
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Trapped Positive Charge-Density Change
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(001) |
| Si(111) |
| Si(011) |
Notes
| 1338 |