Publication Information

Title: Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations

Type: Journal

Info: Journal of The Electrochemical Society, 155 (4) H267-H271 (2008)

Date: 2008-01-08

DOI: http://dx.doi.org/10.1149/1.2840616

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Plasma HfO2 using Custom ICP

Deposition Temperature = 250C

19962-11-9

7782-44-7

Plasma HfON using Custom ICP

Deposition Temperature = 250C

19962-11-9

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Leakage Current

I-V, Current-Voltage Measurements

HP 4284A LCR

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Trapped Positive Charge-Density Change

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Substrates

Si(001)

Si(111)

Si(011)

Keywords

Notes

1338



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