Title: In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
Type: Journal
Info: Applied Surface Science 387 (2016) 274 - 279
Date: 2016-06-13
DOI: https://doi.org/10.1016/j.apsusc.2016.06.071
Name
Institution
National Taiwan University
National Taiwan Normal University
National Taiwan University
National Taiwan University
National Taiwan University
Characteristic
Analysis
Diagnostic
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
XRD, X-Ray Diffraction
Unknown
Leakage Current
I-V, Current-Voltage Measurements
Unknown
CET, capacitance equivalent thickness
C-V, Capacitance-Voltage Measurements
Unknown
Dielectric Constant, Permittivity
C-V, Capacitance-Voltage Measurements
Unknown
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
Unknown
Interlayer
TEM, Transmission Electron Microscope
Unknown
Si(100)
ZrO2
ZrON
865
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