Publication Information

Title: In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Type: Journal

Info: Applied Surface Science 387 (2016) 274 - 279

Date: 2016-06-13

DOI: https://doi.org/10.1016/j.apsusc.2016.06.071

Author Information

Name

Institution

National Taiwan University

National Taiwan Normal University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Plasma ZrO2 using Unknown

Deposition Temperature Range N/A

Plasma ZrON using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Leakage Current

I-V, Current-Voltage Measurements

-

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Interlayer

TEM, Transmission Electron Microscope

-

Substrates

Si(100)

ZrO2

ZrON

Keywords

Notes

865



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