Publication Information

Title:
In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
Type:
Journal
Info:
Applied Surface Science 387 (2016) 274 - 279
Date:
2016-06-13

Author Information

Name Institution
Meng-Chen TsaiNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Chin-Lung KuoNational Taiwan University
Hsin-Chih LinNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Unknown


Plasma ZrON

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)
ZrO2
ZrON

Keywords

Notes

865