Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Type:
Journal
Info:
IEEE J. Electron Dev. Soc., Vol. 3, No. 4, July 2015, pp. 377-381
Date:
2015-05-20
DOI:
http://dx.doi.org/10.1109/JEDS.2015.2435492

Author Information

Name Institution
Min-Hung LeeNational Taiwan Normal University
Y.-T. WeiNational Taiwan Normal University
C. LiuNational Taiwan Normal University
Jhih-Jie HuangNational Taiwan University
Ming TangPTEK Technology Company Ltd.
Yu-Lun ChuehNational Tsing Hua University
K.-Y. ChuNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University
Heng-Yuan LeeIndustrial Technology Research Institute
Yu-Sheng ChenIndustrial Technology Research Institute
Li-Heng LeeIndustrial Technology Research Institute
Ming-Jinn TsaiIndustrial Technology Research Institute

Films

Plasma HfZrO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Surface Potential
Analysis: -
Diagnostic: -

Substrates

TiN

Notes

361