Publication Information

Title: Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Type: Journal

Info: IEEE J. Electron Dev. Soc., Vol. 3, No. 4, July 2015, pp. 377-381

Date: 2015-05-20

DOI: http://dx.doi.org/10.1109/JEDS.2015.2435492

Author Information

Name

Institution

National Taiwan Normal University

National Taiwan Normal University

National Taiwan Normal University

National Taiwan University

PTEK Technology Company Ltd.

National Tsing Hua University

National Taiwan Normal University

National Taiwan University

Industrial Technology Research Institute

Industrial Technology Research Institute

Industrial Technology Research Institute

Industrial Technology Research Institute

Films

Plasma HfZrO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Thickness

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Ferroelectricity

P-V, Polarization-Voltage Measurements

-

Ferroelectricity

I-V, Current-Voltage Measurements

-

Ferroelectricity

C-V, Capacitance-Voltage Measurements

-

Surface Potential

Unknown

-

Substrates

TiN

Keywords

Notes

361



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