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Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability

Type:
Journal
Info:
Applied Surface Science Volume 330, 1 March 2015, Pages 221-227
Date:
2015-01-03
DOI:
http://dx.doi.org/10.1016/j.apsusc.2015.01.005

Author Information

Name Institution
Jhih-Jie HuangNational Taiwan University
Yi-Jen TsaiNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Min-Hung LeeNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Silicon

Notes

325