Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments

Type:
Journal
Info:
2013 J. Phys. D: Appl. Phys. 46 055103
Date:
2012-11-08
DOI:
http://dx.doi.org/10.1088/0022-3727/46/5/055103

Author Information

Name Institution
Li-Tien HuangNational Taiwan University
Ming-lun ChangIntegrated Service Technology Inc.
Jhih-Jie HuangNational Taiwan University
Chin-Lung KuoNational Taiwan University
Hsin-Chih LinNational Taiwan University
Ming-Han LiaoNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University

Films

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

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