Publication Information

Title:
Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
Type:
Journal
Info:
2013 J. Phys. D: Appl. Phys. 46 055103
Date:
2012-11-08

Author Information

Name Institution
Li-Tien HuangNational Taiwan University
Ming-lun ChangIntegrated Service Technology Inc.
Jhih-Jie HuangNational Taiwan University
Chin-Lung KuoNational Taiwan University
Hsin-Chih LinNational Taiwan University
Ming-Han LiaoNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University

Films


Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Notes

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