Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 12, P524-P528
Date:
2013-10-12

Author Information

Name Institution
Jhih-Jie HuangNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Li-Tien HuangNational Taiwan University
Min-Hung LeeNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films


Plasma Al2O3


Plasma AlON


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

Substrates HF dipped.
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