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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
Type:
Journal
Info:
Current Applied Physics 14 (2014) 552-557
Date:
2013-11-30
Author Information
| Name | Institution |
|---|---|
| Sanghun Lee | Hanyang University |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 220 |