Publication Information

Title: Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD

Type: Journal

Info: Materials Science in Semiconductor Processing Volume 56, December 2016, Pages 277-281

Date: 2016-08-28

DOI: http://dx.doi.org/10.1016/j.mssp.2016.08.025

Author Information

Name

Institution

North Maharashtra University

North Maharashtra University

North Maharashtra University

University of California - Santa Barbara (UCSB)

North Maharashtra University

Films

Plasma ZrO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

Unknown

-

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Hysteresis

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Ge

Keywords

Passivation

Notes

970



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