Publication Information

Title:
Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
Type:
Journal
Info:
Materials Science in Semiconductor Processing Volume 56, December 2016, Pages 277-281
Date:
2016-08-28

Author Information

Name Institution
V.S. PatilNorth Maharashtra University
K.S. AgrawalNorth Maharashtra University
Anil G. KhairnarNorth Maharashtra University
B. J. ThibeaultUniversity of California - Santa Barbara (UCSB)
A.M. MahajanNorth Maharashtra University

Films


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: -

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

GeON

Keywords

Passivation

Notes

970