Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 215 (2019) 111013
Date:
2019-05-25
DOI:
https://doi.org/10.1016/j.mee.2019.111013

Author Information

Name Institution
Takashi OnayaMeiji University
Toshihide NabatameNational Institute for Materials Science (NIMS)
Naomi SawamotoMeiji University
Akihiko OhiNational Institute for Materials Science (NIMS)
Norihiko IkedaNational Institute for Materials Science (NIMS)
Takahiro NagataNational Institute for Materials Science (NIMS)
Atsushi OginoMeiji University

Films

Plasma HfZrO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Remanent Polarization
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

TiN

Notes

Hf and Zr introduced as a cocktail of TEMAHf and TEMAZr.
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