plasma-ald.com
  • PEALD Publication Database
    Films Precursors Hardware Authors Film and Plasma Characteristics Theses Multi-factor Search
  • Mark's LinkedIn Profile
  • Contact Us
  • ALD Links

Applied Materials Acquires Picosun!

Applied Materials Producer GTTM
Applied Materials Volta
Applied Materials 300mm ALD
Applied Materials P-5000 Mark II
Picosun R200
Applied Materials TxZ chamber
Picosun SUNALE R-150B

2021 Year in Review


May 2022 Top Pages

Publications
Chemistries
Films
"Where to Buy" Chemistry

The publication database currently has 1636 entries.
203 Films Compositions
274 Precursors and Plasma Gases
77 Deposition Hardwares
251 Film and Plasma Characteristics
91 Theses
5041 Authors

Use Advanced Search for more complex searches


ALD Links
Contact Us
LinkedIn Profile

Recent Database Additions
Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene Electron-enhanced atomic layer deposition of silicon thin films at room temperature Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
Search 1636 plasma ALD publications by:
203 Films Compositions
274 Precursors and Plasma Gases
77 Deposition Hardwares
251 Film and Plasma Characteristics

Toshihide Nabatame Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Toshihide Nabatame returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
2Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
3Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
4Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
5Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
6Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
7Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
8Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

© 2014-2022 plasma-ald.com