Publication Information

Title:
Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032409 (2020)
Date:
2020-03-26

Author Information

Name Institution
Erika MaedaShibaura Institute of Technology
Toshihide NabatameNational Institute for Materials Science (NIMS)
Masafumi HiroseShibaura Institute of Technology
Mari InoueNational Institute for Materials Science (NIMS)
Akihiko OhiNational Institute for Materials Science (NIMS)
Naoki IkedaNational Institute for Materials Science (NIMS)
Hajime KiyonoShibaura Institute of Technology

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Substrates

Si with native oxide

Keywords

Reaction Mechanism

Notes

1486