Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032409 (2020)
Date:
2020-03-26
DOI:
http://dx.doi.org/10.1116/6.0000078

Author Information

Name Institution
Erika MaedaShibaura Institute of Technology
Toshihide NabatameNational Institute for Materials Science (NIMS)
Masafumi HiroseShibaura Institute of Technology
Mari InoueNational Institute for Materials Science (NIMS)
Akihiko OhiNational Institute for Materials Science (NIMS)
Naoki IkedaNational Institute for Materials Science (NIMS)
Hajime KiyonoShibaura Institute of Technology

Films

Plasma SiO2

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Substrates

Si with native oxide

Notes

1486