Publication Information

Title:
Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
Type:
Journal
Info:
AIP ADVANCES 9, 045019 (2019)
Date:
2019-04-05

Author Information

Name Institution
Fumikazu MizutaniKojundo Chemical Laboratory Co., Ltd.
Shintaro HigashiKojundo Chemical Laboratory Co., Ltd.
Mari InoueNational Institute for Materials Science (NIMS)
Toshihide NabatameNational Institute for Materials Science (NIMS)

Films

Other In2O3

Hardware used: Picosun R200


CAS#: 7732-18-5

CAS#: 7782-44-7

Thermal In2O3

Hardware used: Picosun R200


CAS#: 7732-18-5

CAS#: 7782-44-7

Plasma In2O3

Hardware used: Picosun R200


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Precursor Characterization
Analysis: Vapor Pressure

Substrates

SiO2

Keywords

Notes

Nice compilation of In2O3 ALD precursor references.
1285