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Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
Type:
Journal
Info:
AIP ADVANCES 9, 045019 (2019)
Date:
2019-04-05
Author Information
| Name | Institution |
|---|---|
| Fumikazu Mizutani | Kojundo Chemical Laboratory Co., Ltd. |
| Shintaro Higashi | Kojundo Chemical Laboratory Co., Ltd. |
| Mari Inoue | National Institute for Materials Science (NIMS) |
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Films
Other In2O3
Thermal In2O3
Plasma In2O3
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry
Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Precursor Characterization
Analysis: Vapor Pressure
Substrates
| SiO2 |
Notes
| Nice compilation of In2O3 ALD precursor references. |
| 1285 |