Publication Information

Title: Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Type: Journal

Info: Journal of Vacuum Science & Technology A 35, 061503 (2017)

Date: 2017-07-31

DOI: http://dx.doi.org/10.1116/1.4998425

Author Information

Name

Institution

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

Shibaura Institute of Technology

Meiji University

Meiji University

National Institute for Materials Science (NIMS)

Osaka University

Osaka University

Osaka University

Shibaura Institute of Technology

Meiji University

National Institute for Materials Science (NIMS)

Films

Plasma RuO2 using Unknown

Deposition Temperature = 300C

32992-96-4

7782-44-7

Thermal Ru using Unknown

Deposition Temperature = 300C

32992-96-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Leakage Current

C-AFM, Conductive Atomic Force Microscopy

-

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Substrates

SiO2

Al2O3

TiO2

Keywords

Plasma vs Thermal Comparison

Notes

1089



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