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Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 061503 (2017)
Date:
2017-07-31
DOI:
http://dx.doi.org/10.1116/1.4998425

Author Information

Name Institution
Tomomi SawadaNational Institute for Materials Science (NIMS)
Toshihide NabatameNational Institute for Materials Science (NIMS)
Thang Duy DaoNational Institute for Materials Science (NIMS)
Ippei YamamotoShibaura Institute of Technology
Kazunori KurishimaMeiji University
Takashi OnayaMeiji University
Akihiko OhiNational Institute for Materials Science (NIMS)
Kazuhiro ItoOsaka University
Makoto TakahashiOsaka University
Kazuyuki KohamaOsaka University
Tomoji OhishiShibaura Institute of Technology
Atsushi OguraMeiji University
Tadaaki NagaoNational Institute for Materials Science (NIMS)

Films

Plasma RuO2

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal Ru

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: C-AFM, Conductive Atomic Force Microscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

SiO2
Al2O3
TiO2

Notes

1089