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Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 061503 (2017)
Date:
2017-07-31
Author Information
| Name | Institution |
|---|---|
| Tomomi Sawada | National Institute for Materials Science (NIMS) |
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
| Thang Duy Dao | National Institute for Materials Science (NIMS) |
| Ippei Yamamoto | Shibaura Institute of Technology |
| Kazunori Kurishima | Meiji University |
| Takashi Onaya | Meiji University |
| Akihiko Ohi | National Institute for Materials Science (NIMS) |
| Kazuhiro Ito | Osaka University |
| Makoto Takahashi | Osaka University |
| Kazuyuki Kohama | Osaka University |
| Tomoji Ohishi | Shibaura Institute of Technology |
| Atsushi Ogura | Meiji University |
| Tadaaki Nagao | National Institute for Materials Science (NIMS) |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Leakage Current
Analysis: C-AFM, Conductive Atomic Force Microscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| SiO2 |
| Al2O3 |
| TiO2 |
Notes
| 1089 |