Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis

Type:
Journal
Info:
APL Mater. 9, 031111 (2021)
Date:
2021-03-04

Author Information

Name Institution
Takashi OnayaMeiji University
Toshihide NabatameNational Institute for Materials Science (NIMS)
Yong Chan JungUniversity of Texas at Dallas
Heber Hernandez-ArriagaUniversity of Texas at Dallas
Jaidah MohanUniversity of Texas at Dallas
Harrison Sejoon KimUniversity of Texas at Dallas
Naomi SawamotoMeiji University
Chang-Yong NamBrookhaven National Laboratory
Esther H. R. TsaiBrookhaven National Laboratory
Takahiro NagataNational Institute for Materials Science (NIMS)
Jiyoung KimUniversity of Texas at Dallas
Atsushi OguraMeiji University

Films



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIWAXS, Grazing Incidence Wide Angle X-ray Scattering

Substrates

TiN

Notes

1687