Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis

Type:
Journal
Info:
APL Mater. 9, 031111 (2021)
Date:
2021-03-04

Author Information

Name Institution
Takashi OnayaMeiji University
Toshihide NabatameNational Institute for Materials Science (NIMS)
Yong Chan JungUniversity of Texas at Dallas
Heber Hernandez-ArriagaUniversity of Texas at Dallas
Jaidah MohanUniversity of Texas at Dallas
Harrison Sejoon KimUniversity of Texas at Dallas
Naomi SawamotoMeiji University
Chang‐Yong NamBrookhaven National Laboratory
Esther H. R. TsaiBrookhaven National Laboratory
Takahiro NagataNational Institute for Materials Science (NIMS)
Jiyoung KimUniversity of Texas at Dallas
Atsushi OguraMeiji University

Films



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIWAXS, Grazing Incidence Wide Angle X-ray Scattering

Substrates

TiN

Keywords

Ferroelectrics
Precursor cocktail

Notes

1687