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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 2, 293-300
Date:
2014-08-24
Author Information
| Name | Institution |
|---|---|
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Films
Film/Plasma Properties
Characteristic: Flat Band Voltage Shift
Analysis: -
Substrates
Keywords
| Flash Memory |
| Capacitors |
Notes
| 244 |