Publication Information

Title: Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 61, issue 2, 293-300

Date: 2014-08-24

DOI: http://dx.doi.org/10.1149/06102.0293ecst

Author Information

Name

Institution

Toshihide Nabatame

National Institute for Materials Science (NIMS)

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Flat Band Voltage Shift

-

-

Substrates

Keywords

Flash Memory

Capacitors

Notes

244


Mark Sowa

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