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Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
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Publication Information
Title:
Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 2, 293-300
Date:
2014-08-24
Author Information
| Name | Institution |
|---|---|
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Films
Film/Plasma Properties
Characteristic: Flat Band Voltage Shift
Analysis: -
Substrates
Keywords
| Flash Memory |
| Capacitors |
Notes
| 244 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |