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Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer

Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 2, 293-300
Date:
2014-08-24
DOI:
http://dx.doi.org/10.1149/06102.0293ecst

Author Information

Name Institution
Toshihide NabatameNational Institute for Materials Science (NIMS)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Flat Band Voltage Shift
Analysis: -
Diagnostic: -

Substrates

Notes

244