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The publication database currently has 1567 entries.

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195 Films Compositions

265 Precursors and Plasma Gases

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242 Film and Plasma Characteristics

84 Theses

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In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films Influence of oxygen source on the ferroelectric properties of ALD grown Hf_1-xZr_xO₂ films

Search 1567 plasma ALD publications by:

195 Films Compositions

265 Precursors and Plasma Gases

76 Deposition Hardwares

242 Film and Plasma Characteristics

Characteristics of Charge Trap Flash Memory with Al₂O₃/(Ta/Nb)Ox/Al₂O₃ Multi-Layer

Type:

Conference Proceedings

Info:

ECS Trans. 2014 volume 61, issue 2, 293-300

Date:

2014-08-24

DOI:

http://dx.doi.org/10.1149/06102.0293ecst

Author Information

Name	Institution
Toshihide Nabatame	National Institute for Materials Science (NIMS)

Films

Plasma Al₂O₃

Hardware used: Unknown

TMA, AlMe₃, Trimethyl Aluminum

CAS#: 75-24-1

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Flat Band Voltage Shift

Analysis: -

Diagnostic: -

Substrates

Keywords

Flash Memory
Capacitors

Notes

244