Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 2, 293-300
Date:
2014-08-24
Author Information
| Name | Institution |
|---|---|
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Films
Film/Plasma Properties
Characteristic: Flat Band Voltage Shift
Analysis: -
Substrates
Notes
| 244 |