Publication Information

Title: Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 61, issue 2, 293-300

Date: 2014-08-24

DOI: http://dx.doi.org/10.1149/06102.0293ecst

Author Information

Name

Institution

Toshihide Nabatame

National Institute for Materials Science (NIMS)

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 200C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Flat Band Voltage Shift

Unknown

Unknown

Substrates

Keywords

Flash Memory

Capacitors

Notes

244


Mark Sowa

Shortcuts

Films
Precursors
Deposition Hardware
Authors
Film and Plasma Characteristics
Multi-factor Search
ALD and PEALD Background
On-line PEALD Theses
About plasma-ald.com

Contact Us
ALD Links

© 2014-2018 plasma-ald.com