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Atomic layer epitaxy of germanium
Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
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Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 61, issue 2, 293-300
Date:
2014-08-24
Author Information
| Name | Institution |
|---|---|
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Films
Film/Plasma Properties
Characteristic: Flat Band Voltage Shift
Analysis: -
Substrates
Keywords
| Flash Memory |
| Capacitors |
Notes
| 244 |