Publication Information

Title:
Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022412 (2020)
Date:
2020-01-13

Author Information

Name Institution
Fumikazu MizutaniKojundo Chemical Laboratory Co., Ltd.
Shintaro HigashiKojundo Chemical Laboratory Co., Ltd.
Mari InoueNational Institute for Materials Science (NIMS)
Toshihide NabatameNational Institute for Materials Science (NIMS)

Films

Thermal Ga2O3


Thermal Ga2O3


Plasma Ga2O3


Thermal Ga2O3

Hardware used: Picosun R200


CAS#: 7732-18-5

CAS#: 7782-44-7

Other Ga2O3

Hardware used: Picosun R200


CAS#: 7732-18-5

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Precursor Vapor Pressure
Analysis: Vapor Pressure

Substrates

Si with native oxide

Keywords

Plasma vs Thermal Comparison

Notes

1433