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Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022412 (2020)
Date:
2020-01-13
Author Information
| Name | Institution |
|---|---|
| Fumikazu Mizutani | Kojundo Chemical Laboratory Co., Ltd. |
| Shintaro Higashi | Kojundo Chemical Laboratory Co., Ltd. |
| Mari Inoue | National Institute for Materials Science (NIMS) |
| Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Films
Thermal Ga2O3
Thermal Ga2O3
Plasma Ga2O3
Thermal Ga2O3
Other Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Precursor Vapor Pressure
Analysis: Vapor Pressure
Substrates
| Si with native oxide |
Notes
| 1433 |