Publication Information

Title:
Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 061506 (2015)
Date:
2015-08-07

Author Information

Name Institution
Kazunori KurishimaMeiji University
Toshihide NabatameNational Institute for Materials Science (NIMS)
Maki ShimizuNational Institute for Materials Science (NIMS)
Nobuhiko MitomaNational Institute for Materials Science (NIMS)
Takio KizuNational Institute for Materials Science (NIMS)
Shinya AikawaNational Institute for Materials Science (NIMS)
Kazuhito TsukagoshiNational Institute for Materials Science (NIMS)
Akihiko OhiNational Institute for Materials Science (NIMS)
Toyohiro ChikyowNational Institute for Materials Science (NIMS)
Atsushi OguraMeiji University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2

Keywords

Notes

392