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Publication Information

Title: Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Type: Journal

Info: Journal of Vacuum Science & Technology A 33, 061506 (2015)

Date: 2015-08-07

DOI: http://dx.doi.org/10.1116/1.4928763

Author Information

Name

Institution

Meiji University

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

Meiji University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Transistor Characteristics

Transistor Characterization

Keithley 4200-SCS

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

392



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