
Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 061506 (2015)
Date:
2015-08-07
Author Information
Name | Institution |
---|---|
Kazunori Kurishima | Meiji University |
Toshihide Nabatame | National Institute for Materials Science (NIMS) |
Maki Shimizu | National Institute for Materials Science (NIMS) |
Nobuhiko Mitoma | National Institute for Materials Science (NIMS) |
Takio Kizu | National Institute for Materials Science (NIMS) |
Shinya Aikawa | National Institute for Materials Science (NIMS) |
Kazuhito Tsukagoshi | National Institute for Materials Science (NIMS) |
Akihiko Ohi | National Institute for Materials Science (NIMS) |
Toyohiro Chikyow | National Institute for Materials Science (NIMS) |
Atsushi Ogura | Meiji University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
SiO2 |
Notes
392 |