Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 061506 (2015)
Date:
2015-08-07
DOI:
http://dx.doi.org/10.1116/1.4928763

Author Information

Name Institution
Kazunori KurishimaMeiji University
Toshihide NabatameNational Institute for Materials Science (NIMS)
Maki ShimizuNational Institute for Materials Science (NIMS)
Nobuhiko MitomaNational Institute for Materials Science (NIMS)
Takio KizuNational Institute for Materials Science (NIMS)
Shinya AikawaNational Institute for Materials Science (NIMS)
Kazuhito TsukagoshiNational Institute for Materials Science (NIMS)
Akihiko OhiNational Institute for Materials Science (NIMS)
Toyohiro ChikyowNational Institute for Materials Science (NIMS)
Atsushi OguraMeiji University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Keithley 4200-SCS

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Notes

392