Publication Information

Title:
High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
Type:
Journal
Info:
Silicon 2015, pp 1--6
Date:
2015-08-19

Author Information

Name Institution
A.M. MahajanNorth Maharashtra University
Anil G. KhairnarNorth Maharashtra University
B. J. ThibeaultUniversity of California - Santa Barbara (UCSB)

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

Ge

Keywords

Notes

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