PEALD ZrO2 Films Deposition on TiN and Si Substrates

Type:
Conference Proceedings
Info:
ECS Transactions, 25 (8) 235-241 (2009)
Date:
2009-10-05

Author Information

Name Institution
D. MonnierSTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
Emilie DeloffreSTMicroelectronics
Béatrice DoisneauGrenoble-CNRS-Université Joseph Fourier
Stéphane CoindeauGrenoble-CNRS-Université Joseph Fourier
Alexandre CrisciGrenoble-CNRS-Université Joseph Fourier
Jérôme RoyEuropean Synchrotron Radiation Facility (ESRF)
Yanyu MiEuropean Synchrotron Radiation Facility (ESRF)
Blanka DetlefsEuropean Synchrotron Radiation Facility (ESRF)
Jorg ZegenhagenEuropean Synchrotron Radiation Facility (ESRF)
Christophe WyonConsortium des Moyens Technologiques Communs (CMTC)
Christine MartinetUniversité Lyon
Fabien VolpiGrenoble-CNRS-Université Joseph Fourier
Elisabeth BlanquetGrenoble-CNRS-Université Joseph Fourier

Films


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

TiN
Si(100)

Notes

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