PEALD ZrO2 Films Deposition on TiN and Si Substrates

Type:
Conference Proceedings
Info:
ECS Transactions, 25 (8) 235-241 (2009)
Date:
2009-10-05
DOI:
http://dx.doi.org/10.1149/1.3207596

Author Information

Name Institution
D. MonnierSTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
Emilie DeloffreSTMicroelectronics
Béatrice DoisneauGrenoble-CNRS-Université Joseph Fourier
Stéphane CoindeauGrenoble-CNRS-Université Joseph Fourier
Alexandre CrisciGrenoble-CNRS-Université Joseph Fourier
Jérôme RoyEuropean Synchrotron Radiation Facility (ESRF)
Yanyu MiEuropean Synchrotron Radiation Facility (ESRF)
Blanka DetlefsEuropean Synchrotron Radiation Facility (ESRF)
Jorg ZegenhagenEuropean Synchrotron Radiation Facility (ESRF)
Christophe WyonConsortium des Moyens Technologiques Communs (CMTC)
Christine MartinetUniversité Lyon
Fabien VolpiGrenoble-CNRS-Université Joseph Fourier
Elisabeth BlanquetGrenoble-CNRS-Université Joseph Fourier

Films

Plasma ZrO2

Hardware used: ASM EmerALD
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

TiN
Si(100)

Notes

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