Publication Information

Title: PEALD ZrO2 Films Deposition on TiN and Si Substrates

Type: Conference Proceedings

Info: ECS Transactions, 25 (8) 235-241 (2009)

Date: 2009-10-05

DOI: http://dx.doi.org/10.1149/1.3207596

Author Information

Name

Institution

STMicroelectronics

STMicroelectronics

STMicroelectronics

Grenoble-CNRS-Université Joseph Fourier

Grenoble-CNRS-Université Joseph Fourier

Grenoble-CNRS-Université Joseph Fourier

European Synchrotron Radiation Facility (ESRF)

European Synchrotron Radiation Facility (ESRF)

European Synchrotron Radiation Facility (ESRF)

European Synchrotron Radiation Facility (ESRF)

Consortium des Moyens Technologiques Communs (CMTC)

Université Lyon

Grenoble-CNRS-Université Joseph Fourier

Grenoble-CNRS-Université Joseph Fourier

Films

Plasma ZrO2 using ASM EmerALD

Deposition Temperature = 250C

175923-04-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

TiN

Si(100)

Keywords

Notes

727



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