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Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Type:
Journal
Info:
Adv. Electron. Mater. 2022, 8, 2200601
Date:
2022-07-08
DOI:
https://doi.org/10.1002/aelm.202200601

Author Information

Name Institution
Shelby S. FieldsUniversity of Virginia
Truong CaiBrown University
Samantha T. JaszewskiUniversity of Virginia
Alejandro SalanovaUniversity of Virginia
Takanori MimuraUniversity of Virginia
Helge H. HeinrichUniversity of Virginia
Michael David HenrySandia National Laboratories
Kyle P. KelleyOak Ridge National Laboratory
Brian W. SheldonBrown University
Jon F. IhlefeldUniversity of Virginia

Films

Plasma HfZrO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 260C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe III

Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: Radiant Technologies Precision LC II

Characteristic: Remanent Polarization
Analysis: PUND, Positive Up Negative Down Measurements
Diagnostic: Radiant Technologies Precision LC II

Characteristic: Ferroelectricity
Analysis: FORC, First-Order Reversal Curve Measurements
Diagnostic: Radiant Technologies Precision LC II

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Loss Tangent
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keysight B2901A Precision Source

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: Bruker Dektak XT

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Helios G4 CX

Characteristic: Thickness
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: FEI Themis

Characteristic: Interlayer
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: FEI Themis

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Themis

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research Cypher AFM

Characteristic: Stress
Analysis: HT-MOSS, High Temperature Multibeam Optical Stress Sensor Measur
Diagnostic: -

Substrates

TaN

Notes

1747