
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Type:
Journal
Info:
Adv. Electron. Mater. 2022, 8, 2200601
Date:
2022-07-08
Author Information
Name | Institution |
---|---|
Shelby S. Fields | University of Virginia |
Truong Cai | Brown University |
Samantha T. Jaszewski | University of Virginia |
Alejandro Salanova | University of Virginia |
Takanori Mimura | University of Virginia |
Helge H. Heinrich | University of Virginia |
Michael David Henry | Sandia National Laboratories |
Kyle P. Kelley | Oak Ridge National Laboratory |
Brian W. Sheldon | Brown University |
Jon F. Ihlefeld | University of Virginia |
Films
Plasma HfZrO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Remanent Polarization
Analysis: PUND, Positive Up Negative Down Measurements
Characteristic: Ferroelectricity
Analysis: FORC, First-Order Reversal Curve Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Loss Tangent
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Stress
Analysis: Wafer Curvature
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Thickness
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Interlayer
Analysis: HAADF, High-Angle Annular Dark Field
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Stress
Analysis: HT-MOSS, High Temperature Multibeam Optical Stress Sensor Measur
Substrates
TaN |
Notes
1747 |