Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Type:
Journal
Info:
Adv. Electron. Mater. 2022, 8, 2200601
Date:
2022-07-08

Author Information

Name Institution
Shelby S. FieldsUniversity of Virginia
Truong CaiBrown University
Samantha T. JaszewskiUniversity of Virginia
Alejandro SalanovaUniversity of Virginia
Takanori MimuraUniversity of Virginia
Helge H. HeinrichUniversity of Virginia
Michael David HenrySandia National Laboratories
Kyle P. KelleyOak Ridge National Laboratory
Brian W. SheldonBrown University
Jon F. IhlefeldUniversity of Virginia

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements

Characteristic: Remanent Polarization
Analysis: PUND, Positive Up Negative Down Measurements

Characteristic: Ferroelectricity
Analysis: FORC, First-Order Reversal Curve Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Loss Tangent
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Stress
Analysis: Wafer Curvature

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Interlayer
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Stress
Analysis: HT-MOSS, High Temperature Multibeam Optical Stress Sensor Measur

Substrates

TaN

Notes

1747