Publication Information

Title:
Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
Type:
Journal
Info:
J. Vac. Sci. Technol. A 23(3), May/Jun 2005
Date:
2005-05-01

Author Information

Name Institution
Sandy X. LaoUniversity of California - Los Angeles (UCLA)
Ryan M. MartinUniversity of California - Los Angeles (UCLA)
Jane P. ChangUniversity of California - Los Angeles (UCLA)

Films

Plasma HfO2


Plasma ZrO2


Film/Plasma Properties

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Spectrophotometry

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thermal Stability
Analysis: Anneal

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

High-k Dielectric Thin Films

Notes

Silicon samples DI rinsed and HF cleaned.
Deposition temperature not mentioned. Cold wall reactor. Perhaps related to high ZrO2 GPC.
Results compared to PECVD results from their earlier publication.
Some samples annealed at 250C in air.
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