
Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
Type:
Journal
Info:
J. Vac. Sci. Technol. A 23(3), May/Jun 2005
Date:
2005-05-01
Author Information
Name | Institution |
---|---|
Sandy X. Lao | University of California - Los Angeles (UCLA) |
Ryan M. Martin | University of California - Los Angeles (UCLA) |
Jane P. Chang | University of California - Los Angeles (UCLA) |
Films
Film/Plasma Properties
Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Spectrophotometry
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thermal Stability
Analysis: Anneal
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
Silicon |
Notes
Silicon samples DI rinsed and HF cleaned. |
Deposition temperature not mentioned. Cold wall reactor. Perhaps related to high ZrO2 GPC. |
Results compared to PECVD results from their earlier publication. |
Some samples annealed at 250C in air. |
63 |