|2||Strem Chemicals, Inc.||Zirconium(IV) t-butoxide, 99%|
|3||Strem Chemicals, Inc.||Zirconium(IV) t-butoxide (99.99%-Zr)|
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Your search for publications using this chemistry returned 4 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method|
|2||Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films|
|3||ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method|
|4||ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition|
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