Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


ZrTB, Zr[OC(Me)3]4, Zr[OC(CH3)3]4, Zirconium tetra-tert-butoxide, CAS# 2081-12-1

Where to buy

NumberVendorRegionLink
1Ereztech🇺🇸Zirconium(IV) tert-butoxide
2Strem Chemicals, Inc.🇺🇸Zirconium(IV) t-butoxide, 99%
3Strem Chemicals, Inc.🇺🇸Zirconium(IV) t-butoxide (99.99%-Zr)
4Pegasus Chemicals🇬🇧Zirconium(IV) tert-butoxide

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 4 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
2Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
3ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
4ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method