Publication Information

Title: ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method

Type: Journal

Info: Japanese Journal of Applied Physics 41, 3043--3046 (2002)

Date: 2001-11-01

DOI: http://dx.doi.org/10.1143/jjap.41.3043

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Films

Thermal ZrO2 using Custom

Deposition Temperature = 250C

2081-12-1

7782-44-7

Plasma ZrO2 using Custom

Deposition Temperature = 250C

2081-12-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

JEOL 2010F

Microstructure

TEM, Transmission Electron Microscope

JEOL 2010F

Interfacial Layer

TEM, Transmission Electron Microscope

JEOL 2010F

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Leakage Current

I-V, Current-Voltage Measurements

Keithley 590 CV Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 590 CV Analyzer

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Interface State Density

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

1232



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