Publication Information

Title:
ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
Type:
Journal
Info:
Japanese Journal of Applied Physics 41, 3043--3046 (2002)
Date:
2001-11-01

Author Information

Name Institution
Jaehyoung KooHanyang University
Yangdo KimHanyang University
Hyeongtag JeonHanyang University

Films

Thermal ZrO2


Plasma ZrO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1232