
Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS, VOLUME 92, NUMBER 9, 1 NOVEMBER 2002
Date:
2002-11-01
Author Information
Name | Institution |
---|---|
Yangdo Kim | Hanyang University |
Jaehyoung Koo | Hanyang University |
Jiwoong Han | Hanyang University |
Sungwoo Choi | Hanyang University |
Hyeongtag Jeon | Hanyang University |
Chan Gyung Park | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Si(100) |
SiOxNy |
Notes
Si(100) substrates received pirahna and HF cleans |
SiOxNy substrates only received pirahna clean. |
ZrO2 films received 800C RTA for 10s in N2. |
55 |