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Publication Information

Title: Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method

Type: Journal

Info: JOURNAL OF APPLIED PHYSICS, VOLUME 92, NUMBER 9, 1 NOVEMBER 2002

Date: 2002-11-01

DOI: http://dx.doi.org/10.1063/1.1513196

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Thermal ZrO2 using Custom

Deposition Temperature Range N/A

2081-12-1

7782-44-7

Plasma ZrO2 using Custom

Deposition Temperature Range N/A

2081-12-1

7782-44-7

Thermal ZrO2 using Custom

Deposition Temperature Range N/A

13801-49-5

7782-44-7

Plasma ZrO2 using Custom

Deposition Temperature Range N/A

13801-49-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

SiOxNy

Keywords

High-k Dielectric Thin Films

Gate Dielectric

Notes

Si(100) substrates received pirahna and HF cleans

SiOxNy substrates only received pirahna clean.

ZrO2 films received 800C RTA for 10s in N2.

55

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