Publication Information

Title:
Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS, VOLUME 92, NUMBER 9, 1 NOVEMBER 2002
Date:
2002-11-01

Author Information

Name Institution
Yangdo KimHanyang University
Jaehyoung KooHanyang University
Jiwoong HanHanyang University
Sungwoo ChoiHanyang University
Hyeongtag JeonHanyang University
Chan Gyung ParkHanyang University

Films

Thermal ZrO2


Plasma ZrO2




Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)
SiOxNy

Keywords

High-k Dielectric Thin Films
Gate Dielectric

Notes

Si(100) substrates received pirahna and HF cleans
SiOxNy substrates only received pirahna clean.
ZrO2 films received 800C RTA for 10s in N2.
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