Publication Information

Title: Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method

Type: Journal

Info: JOURNAL OF APPLIED PHYSICS, VOLUME 92, NUMBER 9, 1 NOVEMBER 2002

Date: 2002-11-01

DOI: http://dx.doi.org/10.1063/1.1513196

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Thermal ZrO2 using Custom

Deposition Temperature Range N/A

2081-12-1

7782-44-7

Plasma ZrO2 using Custom

Deposition Temperature Range N/A

2081-12-1

7782-44-7

Thermal ZrO2 using Custom

Deposition Temperature Range N/A

13801-49-5

7782-44-7

Plasma ZrO2 using Custom

Deposition Temperature Range N/A

13801-49-5

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Thickness

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

SiOxNy

Keywords

High-k Dielectric Thin Films

Gate Dielectric

Notes

Si(100) substrates received pirahna and HF cleans

SiOxNy substrates only received pirahna clean.

ZrO2 films received 800C RTA for 10s in N2.

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