High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
Type:
Conference Proceedings
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23
Author Information
| Name | Institution |
|---|---|
| P. A. von Hauff | University of Alberta |
| Kyle Bothe | University of Alberta |
| Amir Afshar | University of Alberta |
| A. Foroughi-Abari | University of Alberta |
| Douglas W. Barlage | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Mobility
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| GaN |
Notes
| 648 |