Title: ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Type: Journal
Info: Applied Physics Letters 102, 251601 (2013)
Date: 2013-06-09
DOI: http://dx.doi.org/10.1063/1.4812475
Name
Institution
University of Alberta
University of Alberta
University of Alberta
University of Alberta
University of Alberta
University of Alberta
19756-04-8
Characteristic
Analysis
Diagnostic
Capacitance
C-V, Capacitance-Voltage Measurements
-
Interface Trap Density
C-V, Capacitance-Voltage Measurements
-
GaN
625
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