Publication Information

Title:
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 251601 (2013)
Date:
2013-06-09

Author Information

Name Institution
P. A. von HauffUniversity of Alberta
Amir AfsharUniversity of Alberta
A. Foroughi-AbariUniversity of Alberta
Kyle BotheUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Keywords

Notes

625