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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 251601 (2013)
Date:
2013-06-09
Author Information
| Name | Institution |
|---|---|
| P. A. von Hauff | University of Alberta |
| Amir Afshar | University of Alberta |
| A. Foroughi-Abari | University of Alberta |
| Kyle Bothe | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Keywords
Notes
| 625 |