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ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 102, 251601 (2013)
Date:
2013-06-09
DOI:
http://dx.doi.org/10.1063/1.4812475

Author Information

Name Institution
P. A. von HauffUniversity of Alberta
Amir AfsharUniversity of Alberta
A. Foroughi-AbariUniversity of Alberta
Kyle BotheUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Plasma ZrO2

Hardware used: Kurt J Lesker ALD-150L
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

GaN

Notes

625