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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 251601 (2013)
Date:
2013-06-09
Author Information
| Name | Institution |
|---|---|
| P. A. von Hauff | University of Alberta |
| Amir Afshar | University of Alberta |
| A. Foroughi-Abari | University of Alberta |
| Kyle Bothe | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 625 |