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Publication Information
Title:
ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 251601 (2013)
Date:
2013-06-09
Author Information
Name | Institution |
---|---|
P. A. von Hauff | University of Alberta |
Amir Afshar | University of Alberta |
A. Foroughi-Abari | University of Alberta |
Kyle Bothe | University of Alberta |
Kenneth C. Cadien | University of Alberta |
Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
GaN |
Keywords
Notes
625 |
Popular Precursors
Top Authors
Erwin (W.M.M.) Kessels |
Hyeongtag Jeon |
Hyungjun Kim |
Mauritius C. M. (Richard) van de Sanden |
Christophe Detavernier |