Publication Information

Title:
Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
Type:
Journal
Info:
Crystals 2020, 10, 136
Date:
2020-02-20

Author Information

Name Institution
Zhigang XiaoAlabama A&M University
Kim KisslingerBrookhaven National Laboratory
Sam ChanceAlabama A&M University
Samuel BanksAlabama A&M University

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

SiO2

Keywords

Notes

1456