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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Lithium-Iron (III) Fluoride Battery with Double Surface Protection
Type:
Journal
Info:
Advanced Energy Materials Volume 8, Issue 26, 2018
Date:
2018-06-15
Author Information
| Name | Institution |
|---|---|
| Enbo Zhao | Georgia Institute of Technology |
| Oleg Borodin | U.S. Army Research Laboratory |
| Xiaosi Gao | Georgia Institute of Technology |
| Danni Lei | Georgia Institute of Technology |
| Yiran Xiao | Georgia Institute of Technology |
| Xiaolei Ren | Georgia Institute of Technology |
| Wenbin Fu | Georgia Institute of Technology |
| Alexandre Magasinski | Georgia Institute of Technology |
| Kostiantyn Turcheniuk | Georgia Institute of Technology |
| Gleb Yushin | Georgia Institute of Technology |
Films
Plasma Al2O3
Plasma TiO2
Plasma ZrO2
Film/Plasma Properties
Characteristic: Battery Properties
Analysis: Charge/Discharge Cycling
Substrates
| CNTs, Carbon NanoTubes |
| FeF3 |
Notes
| 1426 |