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Publication Information

Title: Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks

Type: Conference Proceedings

Info: ECS Transactions, 33 (2) 69-82 (2010)

Date: 2010-10-01

DOI: http://dx.doi.org/10.1149/1.3485243

Author Information

Name

Institution

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Università  della Calabria

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Films

Deposition Temperature = 250C

75-24-1

7732-18-5

Deposition Temperature = 250C

1284-72-6

7732-18-5

Deposition Temperature = 250C

352535-01-4

7732-18-5

Deposition Temperature = 250C

19756-04-8

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Interlayer

TEM, Transmission Electron Microscope

Unknown

Thickness

Ellipsometry

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Frequency Dispersion

C-V, Capacitance-Voltage Measurements

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface State Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

GaAs

InGaAs

Keywords

Notes

CV and IV work compare annealed and non-annealed samples.

102



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