Publication Information

Title:
Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
Type:
Conference Proceedings
Info:
ECS Transactions, 33 (2) 69-82 (2010)
Date:
2010-10-01

Author Information

Name Institution
Aileen O'MahonyTyndall National Institute, University College Cork
Scott MonaghanTyndall National Institute, University College Cork
R. ChiodoTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork
Karim CherkaouiTyndall National Institute, University College Cork
R. E. NagleTyndall National Institute, University College Cork
É. O'ConnorTyndall National Institute, University College Cork
R. D. LongTyndall National Institute, University College Cork
Vladamir DjaraTyndall National Institute, University College Cork
Dan O'ConnellTyndall National Institute, University College Cork
F. CrupiUniversità  della Calabria
Martin E. PembleTyndall National Institute, University College Cork
Paul K. HurleyTyndall National Institute, University College Cork

Films

Thermal Al2O3


Thermal MgO




Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaAs
InGaAs

Keywords

Notes

CV and IV work compare annealed and non-annealed samples.
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