Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

Type:
Journal
Info:
Japanese Journal of Applied Physics 55, 016502 (2016)
Date:
2015-10-23
DOI:
http://dx.doi.org/10.7567/JJAP.55.016502

Author Information

Name Institution
Kyeong-Keun ChoiPohang University of Science and Technology (POSTECH)
Chan Gyung ParkPohang University of Science and Technology (POSTECH)
Deok-Kee KimSejong University

Films

Other ZrO2

Hardware used: Unknown
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Ta
TaN

Notes

466