Publication Information

Title:
Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
Type:
Conference Proceedings
Info:
CS MANTECH Conference, May 18th - 21st, 2015
Date:
2015-05-18

Author Information

Name Institution
Kyle BotheUniversity of Alberta
A. MaUniversity of Alberta
Amir AfsharUniversity of Alberta
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films


Plasma AlN


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Contact Resistance
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Keywords

Notes

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