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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
Type:
Conference Proceedings
Info:
CS MANTECH Conference, May 18th - 21st, 2015
Date:
2015-05-18
Author Information
| Name | Institution |
|---|---|
| Kyle Bothe | University of Alberta |
| A. Ma | University of Alberta |
| Amir Afshar | University of Alberta |
| Pouyan Motamedi | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Plasma AlN
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Contact Resistance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Keywords
Notes
| 362 |