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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
Type:
Conference Proceedings
Info:
CS MANTECH Conference, May 18th - 21st, 2015
Date:
2015-05-18
Author Information
| Name | Institution |
|---|---|
| Kyle Bothe | University of Alberta |
| A. Ma | University of Alberta |
| Amir Afshar | University of Alberta |
| Pouyan Motamedi | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Plasma AlN
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Contact Resistance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Keywords
Notes
| 362 |