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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
Type:
Conference Proceedings
Info:
CS MANTECH Conference, May 18th - 21st, 2015
Date:
2015-05-18
Author Information
| Name | Institution |
|---|---|
| Kyle Bothe | University of Alberta |
| A. Ma | University of Alberta |
| Amir Afshar | University of Alberta |
| Pouyan Motamedi | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Plasma AlN
Film/Plasma Properties
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Contact Resistance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Keywords
Notes
| 362 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |