Publication Information

Title: Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs

Type: Conference Proceedings

Info: CS MANTECH Conference, May 18th - 21st, 2015

Date: 2015-05-18

DOI: http://www.csmantech.org/Digests/2015/papers/9.4-051.pdf

Author Information

Name

Institution

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

Films

Deposition Temperature = 100C

19756-04-8

7782-44-7

Deposition Temperature = 250C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Contact Resistance

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Keywords

Notes

362



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