Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A138 (2016)
Date:
2015-12-01

Author Information

Name Institution
J ProvineStanford University
Peter SchindlerStanford University
Jan TorgersenUniversity of Vienna
Hyo Jin KimStanford University
Hans-Peter KarnthalerStanford University
Fritz B. PrinzStanford University

Films










Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Notes

442