
Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A138 (2016)
Date:
2015-12-01
Author Information
Name | Institution |
---|---|
J Provine | Stanford University |
Peter Schindler | Stanford University |
Jan Torgersen | University of Vienna |
Hyo Jin Kim | Stanford University |
Hans-Peter Karnthaler | Stanford University |
Fritz B. Prinz | Stanford University |
Films
Thermal TiO2
Thermal TiO2
Plasma TiO2
Thermal HfO2
Thermal HfO2
Plasma HfO2
Thermal ZrO2
Thermal ZrO2
Plasma ZrO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
Si(100) |
Keywords
Notes
442 |