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Publication Information

Title: Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A138 (2016)

Date: 2015-12-01

DOI: http://dx.doi.org/10.1116/1.4937991

Author Information

Name

Institution

Stanford University

Stanford University

University of Vienna

Stanford University

Stanford University

Stanford University

Films

Deposition Temperature Range = 150-250C

3275-24-9

7782-44-7

Deposition Temperature = 200C

3275-24-9

7732-18-5

Deposition Temperature = 200C

3275-24-9

7782-44-7

Deposition Temperature = 200C

19962-11-9

7782-44-7

Deposition Temperature = 200C

19962-11-9

7732-18-5

Deposition Temperature = 200C

19962-11-9

7782-44-7

Deposition Temperature = 200C

19756-04-8

7782-44-7

Deposition Temperature = 200C

19756-04-8

7732-18-5

Deposition Temperature = 200C

19756-04-8

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

FEI Titan ETEM

Images

TEM, Transmission Electron Microscope

FEI Titan ETEM

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Substrates

Si(100)

Keywords

Notes

442


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