Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, PP. 138-141, 2016
Date:
2015-12-17
DOI:
http://dx.doi.org/10.1109/LED.2015.2509021

Author Information

Name Institution
C. ChouNational Chiao Tung University
H. ChangNational Chiao Tung University
C. HsuNational Chiao Tung University
W. YehNational Chiao Tung University
C. ChienNational Chiao Tung University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Substrates

GeO2

Notes

503