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Publication Information

Title: Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, PP. 138-141, 2016

Date: 2015-12-17

DOI: http://dx.doi.org/10.1109/LED.2015.2509021

Author Information

Name

Institution

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

National Chiao Tung University

Films

Deposition Temperature Range N/A

19756-04-8

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

Unknown

Substrates

GeO2

Keywords

Notes

503


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