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Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices

Type:
Conference Proceedings
Info:
2014 GaAs ManTech Conference
Date:
2014-05-19
DOI:
http://gaasmantech.com/Digests/2014/abstracts/51S-Selective%20Deposition%20of%20Low%20Temperature%20AlN%20Ohmic%20Contacts%20for%20GaN%20Devices.pdf

Author Information

Name Institution
Kyle BotheUniversity of Alberta
A. MaUniversity of Alberta
Kevin VoonUniversity of Alberta
Amir AfsharUniversity of Alberta
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma ZrO2

Hardware used: Kurt J Lesker ALD-150L
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

GaN
AlN

Notes

563