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Publication Information

Title: Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN

Type: Journal

Info: IEEE Transactions on Electron Devices, Volume:60, Issue:12, 2013

Date: 2013-10-09

DOI: http://dx.doi.org/10.1109/TED.2013.2283802

Author Information

Name

Institution

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

University of Alberta

Films

Deposition Temperature = 100C

19962-11-9

7782-44-7

Deposition Temperature = 100C

19756-04-8

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Mobility

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

GaN

Keywords

Notes

608



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