Publication Information

Title:
Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:60, Issue:12, 2013
Date:
2013-10-09

Author Information

Name Institution
Kyle BotheUniversity of Alberta
P. A. von HauffUniversity of Alberta
Amir AfsharUniversity of Alberta
A. Foroughi-AbariUniversity of Alberta
Ken CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Mobility
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Keywords

Notes

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