Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:60, Issue:12, 2013
Date:
2013-10-09
Author Information
| Name | Institution |
|---|---|
| Kyle Bothe | University of Alberta |
| P. A. von Hauff | University of Alberta |
| Amir Afshar | University of Alberta |
| A. Foroughi-Abari | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma HfO2
Plasma ZrO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Mobility
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 608 |