Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

Type:
Journal
Info:
Journal of the European Ceramic Society 37 (2017) 1135 - 1139
Date:
2016-10-22
DOI:
https://doi.org/10.1016/j.jeurceramsoc.2016.10.028

Author Information

Name Institution
Bo-Ting LinNational Taiwan University
Yu-Wei LuNational Taiwan University
Jay ShiehNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Rigaku TTRAX III

Characteristic: Ferroelectricity
Analysis: Custom
Diagnostic: aixACCT TF 2000

Substrates

Pt

Notes

866