Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Type:
Journal
Info:
RSC Adv., 2019, 9, 592-598
Date:
2018-12-03

Author Information

Name Institution
Chin-I WangNational Taiwan University
Teng-Jan ChangNational Taiwan University
Chun-Yuan WangNational Taiwan University
Yu-Tung YinNational Taiwan University
Jing-Jong ShyueNational Taiwan University
Hsin-Chih LinAcademia Sinica
Miin-Jang ChenNational Taiwan University

Films


Plasma Al2O3



Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interface State Density
Analysis: G-f, Conductance Density-Frequency Measurements

Substrates

Ge

Keywords

Notes

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