Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
Type:
Journal
Info:
RSC Adv., 2019, 9, 592-598
Date:
2018-12-03
Author Information
| Name | Institution |
|---|---|
| Chin-I Wang | National Taiwan University |
| Teng-Jan Chang | National Taiwan University |
| Chun-Yuan Wang | National Taiwan University |
| Yu-Tung Yin | National Taiwan University |
| Jing-Jong Shyue | National Taiwan University |
| Hsin-Chih Lin | Academia Sinica |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma Al2O3
Plasma AlN
Film/Plasma Properties
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interface State Density
Analysis: G-f, Conductance Density-Frequency Measurements
Substrates
| Ge |
Notes
| 1544 |