Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells

Type:
Journal
Info:
CIRP Annals - Manufacturing Technology 65 (2016) 515-518
Date:
2016-06-01
DOI:
http://dx.doi.org/10.1016/j.cirp.2016.04.079

Author Information

Name Institution
Suk Won ChaSeoul National University
Gu Young ChoSeoul National University
Yeageun LeeSeoul National University
Taehyun ParkSeoul National University
Yusung KimSeoul National University
Jang-moo LeeSeoul National University

Films

Plasma YSZ

Hardware used: CN1 Atomic Premium
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
Tris(methylcyclopentadienyl)yttrium(III), (MeCp)3Y
CAS#: 329735-72-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal ZrO2

Hardware used: CN1 Atomic Premium
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal Y2O3

Hardware used: CN1 Atomic Premium
Tris(methylcyclopentadienyl)yttrium(III), (MeCp)3Y
CAS#: 329735-72-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal YSZ

Hardware used: CN1 Atomic Premium
Tris(methylcyclopentadienyl)yttrium(III), (MeCp)3Y
CAS#: 329735-72-0
Where to buy precursor
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Substrates

Notes

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