Publication Information

Title:
Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
Type:
Journal
Info:
Materials Chemistry and Physics Volume 184, 1 December 2016, Pages 291-297
Date:
2016-09-17

Author Information

Name Institution
Wei-Cheng WangNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Yi-Ping LinNational Taiwan University
Yi-Jen TsaiNational Taiwan University
Hsin-Chih LinNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films


Plasma Al2O3


Plasma AlN


Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Passivation

Notes

971