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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
Type:
Journal
Info:
Materials Chemistry and Physics Volume 184, 1 December 2016, Pages 291-297
Date:
2016-09-17
Author Information
| Name | Institution |
|---|---|
| Wei-Cheng Wang | National Taiwan University |
| Meng-Chen Tsai | National Taiwan University |
| Yi-Ping Lin | National Taiwan University |
| Yi-Jen Tsai | National Taiwan University |
| Hsin-Chih Lin | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma Al2O3
Plasma AlN
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Keywords
| Passivation |
Notes
| 971 |