Publication Information

Title: Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure

Type: Journal

Info: Materials Chemistry and Physics Volume 184, 1 December 2016, Pages 291-297

Date: 2016-09-17

DOI: http://dx.doi.org/10.1016/j.matchemphys.2016.09.054

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Deposition Temperature Range N/A

19756-04-8

7782-44-7

Deposition Temperature Range N/A

75-24-1

7782-44-7

Deposition Temperature Range N/A

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

Unknown

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Images

TEM, Transmission Electron Microscope

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Silicon

Keywords

Passivation

Notes

971



Shortcuts



© 2014-2019 plasma-ald.com