The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
J. Phys. Chem. C, 2017, 121 (8), pp 4714-4719
Date:
2017-02-09
DOI:
http://dx.doi.org/10.1021/acs.jpcc.7b00211

Author Information

Name Institution
Zheng ChenJilin University
Haoran WangJilin University
Pengpeng XiongJilin University
Ping ChenJilin University
Huiying LiJilin University
Yunfei LiuJilin University
Yu DuanJilin University

Films

Plasma ZrO2

Hardware used: Kemicro PEALD-150
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-250C

Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 70

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: -

Substrates

Silicon
KBr

Notes

1221